UAlbany Breakthrough Powers Next-Gen Tech with Record Ultra-High-Voltage Silicon Carbide Switch

A research team at the University at Albany has made a significant breakthrough by successfully creating and showing off a special kind of silicon carbide semiconductor switch, known as an Insulated-Gate Bipolar Transistor (IGBT), that can handle an incredibly high 15,000 volts. This achievement makes UAlbany the first academic institution in the United States and only the second overall to demonstrate such an ultra-high-voltage device, setting a new benchmark for power electronics. Led by Professor Woongje Sung, this milestone was supported by funding from the US Army and involved key partners like GE Aerospace and UAlbany spinout NoMIS Power, building a strong, end-to-end American supply chain for these critical components. This development comes at a crucial time as the world pushes for more efficient energy solutions across various sectors. Silicon carbide (SiC) devices are far better than older silicon ones because they can handle higher voltages and switch power faster, leading to less energy waste and smaller designs. Such advanced semiconductors are essential for next-generation power technologies, including those used in massive AI data centers, defense systems, electric vehicles, and grid infrastructure that connects renewable energy sources. Other companies, like Navitas Semiconductor, are also actively developing ultra-high-voltage SiC modules for similar applications, highlighting the global race in this field. The ability to create these powerful 15kV SiC IGBT domestically is a huge strategic advantage for the US, ensuring that vital components for future energy, defense, and AI systems can be made without relying on other countries. We can expect this technology to accelerate the shift towards more efficient power grids, faster EV charging, and more powerful computing infrastructure. The focus now will be on how quickly these lab achievements can be scaled up for widespread use and how they will shape the global competition in high-performance electronics.